Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 851-854

  Ursaki, V V ^a   Tiginyanu, I M ^a   Zalamai, V V ^a   Masalov, V M ^b   Samarov, E N ^b   Emelchenko, G A ^b   Briones, F ^c  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICA; THERMAL EFFECTS;

CHEMICAL DEPOSITION; OPAL STRUCTURES; ZINC NITRATE;

ZINC OXIDE;

EID: 3142780716     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/012     Document Type: Article

References (34)

1. Miyata T, Minami T, Saikai K and Takata S 1994 J. Lumin. 60 926
2. Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
3. Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
4. Zamfirescu M, Kavokin A, Gill B, Malpuech G and Kaliteevski M 2002 Phys. Rev. B 65 161205(R)
5. Chen Y, Tuan N T, Segawa Y, Ko H J, Hong S K and Yao T 2001 Appl. Phys. Lett. 78 1469
6. Ko H J, Chen Y F, Yao T, Miyajima K, Yamamoto A and Goto T 2000 Appl. Phys. Lett. 77 537
7. Yamamoto A, Miyajima K, Goto T, Ko H J and Yao T 2001 J. Appl. Phys. 90 4973
8. Yu P, Tang Z K, Wong G K L, Kawasaki M, Ohtomo A, Koinum H and Segawa Y 1998 J. Cryst. Growth 184 601
9. Choopun S, Vispute R, Noch W, Balsam A, Sharma R, Venkatesan T, Liadis A and Look D 1999 Appl. Phys. Lett. 75 3947
10. Zubia D and Hersee S D 1999 J. Appl. Phys. 85 6492
11. Zubia D, Zaidi S H, Brueck S R and Hersee S D 2000 Appl. Phys. Lett. 76 858
12. Liang J, Hong S-K, Kouklin N, Beresford R and Xu J M 2003 Appl. Phys. Lett. 83 1752
13. Bogomolov V N, Feoktistov N A, Golubev V G, Hutchison J J and Sorokin I M 2000 J. Non-Cryst. Sol. 266-269 1021
14. Diaz -Cuerra C, Piqueras J, Golubev V G, Curdyukiv D A, Pevtsov A B and Zamoryanskaya M V 2000 Appl. Phys. Lett. 77 3194
15. Golubev V G, Kurdyukov D A, Medvedev A V, Pevtsov A B, Sorokin L M and Hutchison J J 2001 Semiconductors 35 1320
16. Yu P, Tang Z K, Wong G K L, Kawachi M, Ohtomo A and Koinuma H 1996 Proc. 23rd Int. Conf. on Physics of Semiconductors (Berlin 1996) vol 2, ed M Scheffler and R Zimmerman (Singapore: World) p 1453
17. Stöber W, Fink A and Bohn E 1968 J. Colloid Interface Sci. 26 62
18. Masalov V M, Aldushin K A, Dolganov P V and Emel'chenko G A 2001 Phys. Low-Dim. Struct. 5-6 45
19. Chichibu S F, Sota T, Cantwell G, Eason D B and Litton C W 2003 J. Appl. Phys. 93 756
20. Jung S W, Park W I, Cheong H D, Gyu-Chul Yi and Hyun Jang M 2002 Appl. Phys. Lett. 80 1924
21. Reynolds D C, Look D C, Jogai B and Collins T C 2001 Appl. Phys. Lett. 79 3794
22. Chen Y, Bagnall D M, Zhu Z, Sekiuchi T, Park K T, Hiraga K, Yao T, Koyama S, Shen M Y and Goto T 1997 J. Cryst. Growth 181 165
23. Bagnall D M, Chen Y F, Shen M Y, Zhu Z, Goto T and Yao T 1998 J. Cryst. Growth 184/185 605
24. Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Cantwell G 2002 Appl. Phys. Lett. 81 18304
25. Chen J and Fujita T 2002 Japan. J. Appl. Phys. 2 41 L203
26. Zhang X T, Liu Y C, Zhi Z Z, Zhang J Y, Lu Y M, Shen D Z, Xu W, Zhong G Z, Fan X W and Kong X G 2001 J. Phys. D: Appl. Phys. 34 3430
27. Zhang B P, Binh N T, Segawa Y, Wakatsuki K and Usami N 2003 Appl. Phys. Lett. 83 1635
28. Yu P Y and Cardona M 1996 Fundamentals of Semiconductors (Berlin: Springer)
29. Scott J F 1970 Phys. Rev. B 2 1209
30. Zhang X T, Liu Y C, Zhi Z Z, Zhang J Y, Lu Y M, Shen D Z, Xu W, Zhong G Z, Fan X W and Kong X G 2001 J. Phys. D: Appl. Phys. 34 3430
31. Ng H T, Chen B, Li J, Han J, Meyyappan M, Wu J, Li S X and Haller E E 2003 Appl. Phys. Lett. 82 2023
32. Eagles D M 1960 J. Phys. Chem. Sol. 16 76
33. Hvam J H, Blattner G, Reuscher M and Clingshirn C 1983 Phys. Status Solidi b 118 179
34. Hazu K, Sota T, Suzuki K, Adachi S, Chichibu S F, Cantwell G, Eason D B, Reynolds D C and Litton C W 2003 Phys. Rev. B 68 033205