Biexciton luminescence in high-quality ZnO epitaxial thin films

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 4973-4976

  Yamamoto, Aishi ^a   Miyajima, Kensuke ^a   Goto, Takenari ^a   Ko, Hang Ju ^b   Yao, Takafumi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890582     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1407852     Document Type: Article

References (30)

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30. We also measured the temporal behavior of the PL intensity at a low excitation conditions. In this condition the decay curve of X - ILO band is not affected by the M band. The experimental results show that the X band has a fast decay component while the X - ILO hand does not have such a component. The temporal behavior of the X - ILO band can be fitted by rate equations, taking into consideration the free exciton and bound exciton states. Consequently, the fast component of the X band is presumably due to the emission of photon-like exciton polaritons.