Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 689-691

  Mohan, Premila ^a   Nakajima, Fumito ^a   Akabori, Masashi ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETISM; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

KAGOME LATTICE STRUCTURES;

CRYSTAL LATTICES;

EID: 0043014812     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593823     Document Type: Conference Paper

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