Short-cavity Fabry-Perot lasers using crystal facets

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 PART A, 1998, Pages

  Ando, Seigo ^a   Kobayashi, Naoki ^a   Ando, Hiroaki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Fabry Perot cavity; Facet; Metalorganic vapor phase epitaxy; Selective epitaxy; Short cavity laser

Indexed keywords

CRYSTALS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

CRYSTAL FACETS; SHORT CAVITY FABRY PEROT LASERS; SURFACE RECOMBINATION;

SEMICONDUCTOR LASERS;

EID: 0032000132     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l105     Document Type: Article

References (9)

1. L. A. Coldren, K. Iga, B. I. Miller and J. A. Rentschler: Appl. Phys. Lett. 37 (1980) 681.
2. S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton and R. A. Logan: Appl. Phys. Lett. 54 (1989) 493.
3. S. Mitsugi, J. Kato, F. Koyama, A. Matsutani, T. Mukaihara and K. Iga: Jpn. J. Appl. Phys. 11 (1994) 6201.
4. S. Ando, N. Kobayasi and H. Ando: Jpn. J. Appl. Phys. 32 (1993) L1293.
5. S. Ando, N. Kobayasi and H. Ando: Jpn. J. Appl. Phys. 34 (1995) L4.
6. S. Ando, N. Kobayasi, H. Ando and Y. Horikoshi: J. Cryst. Growth 170 (1997) 719.
7. S. Ando, N. Kobayasi and H. Ando: Jpn. J. Appl. Phys. 35 (1996) L411.
8. S. Ando, N. Kobayasi and H. Ando: Jpn. J. Appl. Phys. 36 (1997) L76.
9. T. Nishida, K. Uwai, Y. Kobayashi and N. Kobayashi: Jpn. J. Appl. Phys. 34 (1995) 6326.