Achieving the ballistic-limit current in Si MOSFETs

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 721-726

  Kim, Keunwoo ^a,b   Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; SEMICONDUCTOR DOPING; SILICON;

BALLISTIC-LIMIT CURRENT;

MOSFET DEVICES;

EID: 0037394247     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00330-1     Document Type: Article

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