Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl2 Addition to CF4/O2 Mixtures

Industrial and Engineering Chemistry Research

Volumn 42, Issue 24, 2003, Pages 6080-6087

  Sin, Chian Yuh ^a,b   Chen, Bing Hung ^c   Loh, W L ^b   Yu, J ^b   Yelehanka, P ^b   See, A ^b   Chan, L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HALOGEN COMPOUNDS; HALOGENATION; PHOTORESISTS; POLYSILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC CONCENTRATION RATIOS; TRIMMING RATES;

PLASMAS;

CARBON; CHLORIDE; HALOGEN; HYDROBROMIC ACID; OXYGEN;

PLASMA TREATMENT;

ADDITION REACTION; CHEMICAL ANALYSIS; CONCENTRATION (PARAMETERS); CONFERENCE PAPER; MOLECULAR DYNAMICS; PHOTOCHEMISTRY; PLASMA; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0344063375     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie030059p     Document Type: Conference Paper

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