A novel shallow trench isolation with mini-spacer technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2300-2305

  Yeh, Wen Kuan ^a   Lin, Tony ^a   Chen, Coming ^a   Chou, Jih Wen ^a   Sun, Shin Wei ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Mini spacer; Oxide recess; STI; T shaped trench

Indexed keywords

EID: 0242536654     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2300     Document Type: Article

References (12)

1. S. S. Roth, W. Ray, C. Mazure and Howard C. Kirsch: IEEE Electron Device Lett. 92 (1991).
2. N. Shimizu, Y. naito, Y. Itoh, Y. Shibata, K. Hashimoto, M. Nishio, A. Asai, K. Ohe, H. Umimoto and Y. Hirofuji: Proc. Int. Electron Device Meet. Tech. Digest (1992) p. 279.
3. J. Pfiester: Proc. Symp. VLSI Technology (1993) p. 139.
4. Pierre C. Fazan and Viju K. Mathews: Proc. Int. Electron Device Meet. Tech. Dig. (1993) p. 57.
5. Asanga H. Perera, Jung-Hui Lin, Yao-Ching Ku, Marijean Azrak, Bill Taylor, Jim Hayden, Matt Thompson and Mike Blackwell: Proc. Int. Electron Device Meet. Tech. Dig. (1995) p. 679.
6. A. Bryant, W. Hansch and T. Mii: Proc. Int. Electron Device Meet. Tech. Dig. (1994) p. 671.
7. P. J. Van Der Voom: TED 43 (1996) 1274.
8. C. P. Chang, C. S. Pai, F. H. Baumann, C. T. liu, C. S. Rafferty, M. R. Pinto, E. J. Lloyd, M. Bude, F. P. Klemens, J. F. Miner, K. P. Cheung, J. I. Colonell, W. Y. C. Lai, H. Vaidya, S. J. Hillenius, R. C. Liu and J. T. Clemens: Proc. Int. Electron Device Meet. Tech. Dig. (1997) p. 661.
9. Danny. P. Shum, Jack M. Higman, Michael G. Khazhinsky, Kelvin Y. Wu, Soolin Kao, J. David Burnett and Craig T. Swift: Proc. Int. Electron Device Meet. Tech. Dig. (1997) p. 665.
10. P.-C. Fazan and V.-K. Mathews: Proc. Int. Electron Device Meet. Tech. Dig. (1993) p. 57.
11. T. Park, S. J. Aim, J. H. Ko, C. G. Hong, J. D. Kim, S. T. Ahn and M. Y. Lee: Proc. Int. Electron Device Meet. Tech. Dig. (1994) p. 675.
12. T. Park, Y.-G. Shin, H.-S. Lee, M.-H. Park, S.-D. Kwon, H.-K. Kang, Y.-B. Koh and M.-Y. Lee: Proc. Int. Electron Device Meet. Tech. Dig. (1996) p. 747.