Growth and optical properties of Ge/Si quantum dots formed on patterned SiO2/Si(0 0 1) substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 3-4 SPEC. ISS., 2004, Pages 471-475

  Nguyen, Lam H ^a   Nguyen Duc, T K ^b   Le Thanh, V ^b   D'Avitaya, F A ^b   Derrien, J ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Facetted structures; Patterned substrate; Quantum dots; Selective epitaxial growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYOSTATS; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ELECTRONIC STRUCTURE; ETCHING; HIGH ENERGY ELECTRON DIFFRACTION; NUCLEATION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SIGNAL DETECTION; SILICA;

FACETTED STRUCTURES; PATTERNED SUBSTRATES; SELECTIVE EPITAXIAL GROWTH; WETTING-LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142695540     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.02.009     Document Type: Conference Paper

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