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Volumn 321, Issue 1-2, 1998, Pages 98-105

Fabrication of SiGe quantum dots: A new approach based on selective growth on chemically prepared H-passivated Si(100) surfaces

(1) Le Thanh, Vinh a

a CNRS (France)

Author keywords

Ammonium fluoride; Facet structure; Quantum dots; Selective growth

Indexed keywords

ADSORPTION; AMMONIUM COMPOUNDS; MOLECULES; PASSIVATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

AMMONIUM FLUORIDE SOLUTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0002215677 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00455-6 Document Type: Article

Times cited : (23)

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