Effect of TiN substrate plasma treatment on copper chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2442-2446

  Chang, Chun Li ^a   Lin, Cheng Li ^a   Chen, Mao Chieh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Annealing; Cu CVD; Nucleation; Plasma treatment; TiN; Wetting angle

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; GRAIN BOUNDARIES; NUCLEATION; SPECTRUM ANALYSIS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

DIRECT LIQUID INJECTION (DLI); PLASMA TREATMENT; WETTING ANGLE;

TITANIUM;

EID: 3142691987     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2442     Document Type: Article

References (26)

1. A. Jain, T. T. Kodas, R. Jairath and M. J. Hampden-Smith: J. Vac. Sci. Technol. B 11 (1993) 2107.
2. N. Awaya, H. Inokawa, E. Yamamoto, Y. Okazaki, M. Miyake, Y. Arita and T. Kobayashi: IEEE Trans. Electron Devices 43 (1996) 1206.
3. N. I. Cho and Y. Sul: Mater. Sci. Eng. B 72 (2000) 184.
4. R. Kroger, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen, S. Ramaswami and D. Carl: J. Electrochem. Soc. 146 (1999) 3248.
5. S. W. Kang, J. Y. Yun and S. W. Rhee: J. Electrochem. Soc. 149 (2002) C33.
6. S. Voss, S. Gandikota, L. Y. Chen, R. Tao, D. Cong, A. Duboust, N. Yoshida and S. Ramaswami: Microelectron. Eng. 50 (2000) 501.
7. R. Kroger, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen, S. Ramaswami and D. Carl: Microelectron. Eng. 50 (2000) 375.
8. M. T. Wang, Y. C. Lin and M. C. Chen: J. Electrochem. Soc. 145 (1998) 2538.
9. S. H. Kim, D. S. Chung, K. C. Park, K. B. Kim and S. H. Min: J. Electrochem. Soc. 146 (1999) 1455.
10. A. A. Istratov and E. R. Weber: J. Electrochem. Soc. 149 (2002) G21.
11. C. Marcadal, M. Eizenberg, A. Yoon and L. Chen: J. Electrochem. Soc. 149 (2002) C52.
12. D. H. Kim, R. H. J. Wentorf and W. N. Gill: J. Appl. Phys. 74 (1993) 5164.
13. K. Hanaoka, H. Ohnishi and K. Tachibana: Jpn. J. Appl. Phys. 34 (1995) 2430.
14. Y. S. Kim, D. Jung and S. K. Min: Thin Solid Films 349 (1999) 36.
15. T. Nguyen, L. J. Charneski and S. T. Hsu: J. Electrochem. Soc. 144 (1997) 2829.
16. C. L. Lin: Ph.D Dissertation, National Chiao Tung University, Taiwan, 2002.
17. J. A. T. Norman, B. A. Mutamore, P. N. Dyer, D. A. Roberts and A. K. Hochberg: J. Phys. IV (Paris) 1 (1991) C2-271.
18. J. C. Chiou, Y. J. Chen and M. C. Chen: J. Electron. Mater. 23 (1994) 383.
19. K. Kamoshida and Y. Ito: J. Vac. Sci. Technol. B 15 (1997) 961.
20. H. Toyoda, T. Kawanoue, S. Ito, M. Hasunuma and H. Kaneko: Stress-Induced Phenomena in Metallization, Third International Workshop, Palo Alto, CA, USA, June 1995, eds. P. S. Ho, J. Bravman, C. Y. Li and J. Sanchez (American Institute of Physics, New York, 1996) No. 373, p. 169.
21. J. H. Lee, J. H. Lee, K. J. Hwang, J. Y. Kim, C. G. Suk and S. Y. Choi: Thin Solid Films 375 (2000) 132.
22. A. E. Kaloyeros, C. Dettelbacher, E. T. Eisenbraun, W. A. Lanford and P. J. Toscano: Mater. Res. Soc. Symp. Proc. 229 (1991) 123.
23. C. L. Chang: Master Thesis, National Chiao Tung University, Taiwan, 2003.
24. P. J. Lin and M. C. Chen: Jpn. J. Appl. Phys. 38 (1999) 4863.
25. C. L. Lin, P. S. Chen, C. L. Chang and M. C. Chen: J. Vac. Sci. Technol. B 20 (2002) 1947.
26. C. V. Thompson and R. Carel: Mater. Sci. Eng. B 32 (1995) 211.