Physical and reliability characteristics of metal-oxide-semiconductor devices with HfOxNy gate dielectrics on different surface-oriented substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 5 A, 2004, Pages

  Cheng, Chin Lung ^a   Chang Liao, Kuei Shu ^a   Wang, Ping Liang ^a   Wang, Tien Ko ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Hafnium oxynitride; Metal oxlde semiconductor; Physical characteristics; Reliability; Surface oriented substrate

Indexed keywords

BINDING ENERGY; CAPACITANCE; CRYSTAL STRUCTURE; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; RELIABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXYNITRIDES; PHYSICAL CHARACTERISTICS; SURFACE-ORIENTED SUBSTRATES;

MOS DEVICES;

EID: 3142537149     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l599     Document Type: Article

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