Initial growth steps of ultrathin gate oxides

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 17-24

  Hattori, Takeo ^a   Nohira, Hiroshi ^a   Takahashi, Kensuke ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ENERGY GAP; FILM GROWTH; GATES (TRANSISTOR); OXIDATION; OXIDES; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; ULTRATHIN FILMS;

ULTRATHIN GATE OXIDES;

SEMICONDUCTING FILMS;

EID: 0033190190     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00329-9     Document Type: Article

References (30)

1. H. Sasaki Mmose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Saito, and H. Iwai, (1994), IEDM 94-593.
2. F. M. Ross and J. M. Gibson, Phys. Rev. Lett. 68, 1782 (1992)
3. H. Watanabe, K. Kalo, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura, and K. Terakura, Phys. Rev. Lett. 80, 345 (1998)
4. N. Miyata, H. Watanabe, and M. Ichikawa, Phys. Rev. B 58, 13670 (1998).
5. K. Ohishi and T. Hattori, Jpn. J. Appl. Phys. 33, L675 (1994).
6. T. Aiba, K. Yamauchi, Y. Shimizu, N. Tate, M. Katayama, and T. Hattori, Jpn. J. Appl. Phys. 34, 707 (1995).
7. K. Ishikawa, H. Ogawa, S. Oshida, K. Suzuki, and S. Fujimura, Ext. Abstr. of Int. Conf. on Solid State Devices and Materials (Osaka, 1995) p. 500.
8. Y. Sugita, N. Awaji and S. Watanabe, Ext. Abstr. of Int. Conf. on Solid State Devices and Materials (Yokohama, 1996) p. 380.
9. H. Nohira and T. Hattori, Appl. Surf. Sci. 117/118, 119 (1997).
10. H. Nohira, A. Omura, M. Katayama, and T. Hattori, Appl. Surf. Sci. 123/124 (1998) 546.
11. H. Hirose, H. Nohira, T. Koike, K. Sakano,and T. Hattori, Phys. Rev. B59, 5617 (1999).
12. E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, Phys. Rev. B 52, 1759 (1995).
13. M. Ohashi and T. Hattori, Jpn. J. Appl. Phys. 36 (1997) L397.
14. T. Takahagi, I. Nagai, A. Ishitani and H. Kuroda, J. Appl. Phys. 64 (1988) 3516.
15. M. Sakuraba, J. Murota and S. Ono, J. Appl. Phys. 75 (1994) 3701.
16. G. S. Higashi, R. S. Becker, Y. J. Chabal and A. J. Becker, Appl. Phys. Lett. 58 (1991) 1656.
17. H. Bender, S. Verhaverbeke, M. Caymax, O. Vatel and M. M. Hynes, J. Appl. Phys. 75 (1994) 1207.
18. T. Ohmi, M. Morita, A. Teramoto, K. Makihara and K. S. Tseng, Appl. Phys. Lett. 60 (1992) 2126.
19. U. Gelius, B. Wannberg, P. Baltzer, H. Fellner-Feldegg, G. Carlsson, C.-G. Johansson, J. Larsson, P. Munger and G. Vergerfos, J. Electron Spectrosc. & Relat. Phenom. 52 (1990) 747.
20. P. Guthner, J. Vac. Sci. &Technol. B14 (1996) 2428.
21. W. M. Lau and X.-W. Wu, Surf. Sci. 245, 345 (1991).
22. H. Nohira, Y. Tamura, H. Ogawa, and T. Hattori, IEICE Trans. Electron. E75-C, 757 (1992).
23. N. Watanabe, A. Omura, H. Nohira and T. Hattori, Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials, Hiroshima, 1998, p. 130.
24. N. Watanabe, A. Omura, H. Nohira, and T. Hattori, unpublished.
25. th Int. Symp. UCPSS'98, Ostend, 1998, pp. 241-244.
26. F. G. Bell and L. Ley, Phys. Rev. B37, 8383 (1988).
27. S. Miyazaki, H. Nishimura, M. Fukuda, L. Ley, and J. Ristein, Appl. Surf. Sci. 113/114, 585 (1997).
28. th Int. Vacuum Congress, Birmingham, 1998.
29. T. Hattori, K. Hirose, H. Nohira, K. Takahashi, T. Yagi, Appl. Surf. Sci. 144/145, 297 (1999).
30. Z. H. Lu and J. P. McCaffrey, B. Brar, G. D. Wilk, R. M. Wallance, L. C. Feldman, and S. P. Tay, Appl. Phys. Lett. 71, 2764 (1998).