Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1849-1855

  Cho, Soon ^a,c   Rubloff, Gary W ^a   Aumer, Michael E ^b   Thomson, Darren B ^b   Partlow, Deborah P ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAULT DETECTION; FURNACE LINER ELEMENTS; WAFER SUSCEPTOR;

CHEMICAL SENSORS; ELECTRONIC EQUIPMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 31144441053     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2006110     Document Type: Article

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