Comparison of excited nitrogen sources for molecular-beam-epitaxy GaN growth: Radio frequency and electron cyclotron resonance plasma sources

Applied Physics Letters

Volumn 76, Issue 26, 2000, Pages 3861-3863

  Cho, Sung Hwan ^a   Okumura, Hajime ^a   Akimoto, Katsuhiro ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009454556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126802     Document Type: Article

References (13)

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