MOCVD of Cr 3(C,N) 2 and CrSi xC y films II. Properties as conducting Cu diffusion barriers

Journal of the Electrochemical Society

Volumn 152, Issue 12, 2005, Pages

  Gasqueres C ^a   Duminica, F D ^a   Maury, F ^a,b  

^a INSTITUT CARNOT CIRIMAT   (France)

^b ELECTROCHEMICAL SOCIETY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIER; MOLECULAR PRECURSORS;

COPPER; CRYSTALLIZATION; DIFFUSION; LOW TEMPERATURE OPERATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; THIN FILMS;

CHROMIUM COMPOUNDS;

EID: 30344472447     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2077309     Document Type: Article

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