Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure

Materials Research Bulletin

Volumn 33, Issue 9, 1998, Pages 1331-1337

  Ezer, Y ^a   Harkonen J ^a   Sokolov, V ^a   Saarilahti, J ^b   Kaitila, J ^b   Kuivalainen, P ^a,b  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

A. electronic materials; A. multilayers; A. thin films; B. sputtering

Indexed keywords

ADHESION; ANNEALING; CHROMIUM; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; HIGH TEMPERATURE EFFECTS; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

ELECTRONIC MATERIALS; SHEET RESISTANCE METHOD;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032156775     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(98)00117-2     Document Type: Article

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