Effects of deposition pressure on properties of carbon-doped silicon oxide low dielectric constant films

Journal of the Electrochemical Society

Volumn 152, Issue 12, 2005, Pages

  Rusli, ^a   Wang, M R ^a,b   Wong, T K S ^a,d   Yu, M B ^c   Li, C Y ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; DOPING (ADDITIVES); OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY; THIN FILMS;

DEPOSITION PRESSURER; TRIMETHYLSILANE;

SILICON COMPOUNDS;

EID: 30344452340     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2109587     Document Type: Article

References (17)

1. A. Grill, J. Appl. Phys., 93, 1785 (2003).
2. M. J. Loboda, Mtcroelectron. Eng., 50, 15 (2000).
3. M. R. Wang, Rusli, J. L. Xie, N. Babu, C. Y. Li, and K. Rakesh, J. Appl. Phys., 96, 829 (2004).
4. M. R. Wang, Rusli, M. B. Yu, N. Babu, C. Y. Li, and K. Rakesh, Thin Solid Films, 462-463, 219 (2004).
5. G. Das, G. Mariotto, and A. Quaranta, Mater. Sci. Semicond. Process., 7, 295 (2004).
6. R. S. Brusa, M. Spagolla, G. P. Karwasz, A. Zecca, G. Ottaviani, F. Corni, M. Bacchetta, and E. Carollo, J. Appl. Phys., 95, 2348 (2004).
7. C. Macchi, G. Mariotto, G. F. Karwasz, A. Zecca, M. Bettonte, and R. S. Brusa, Mater. Sci. Semicond. Process., 7, 289 (2004).
8. G. Socrates, Infrared Characteristic Group Frequencies, John Wiley & Sons, New York (1994).
9. A. Grill and V. Patel, J. Appl. Phys., 85, 3314 (1999).
10. A. Grill and D. A. Neumayer, J. Appl. Phys., 94, 6697 (2003).
11. J.-S. Chou and S.-C. Lee, J. Appl. Phys., 77, 1805 (1995).
12. L. Peters, Semicond. Int., 1998, 64 (Sept).
13. P. Gonon, A. Sylvestre, H. Meynen, and L. Van Cottherh, J. Electrochem. Soc., 150, F47 (2003).
14. T. Furusawa, D. Ryuzaki, R. Yoneyama, Y. Homma, and K. Hinode, J. Electrochem. Soc., 148, F175 (2001).
15. Y. C. Quan, J. Joo, S. Yeo, and D. Jung, Jpn. J. Appl. Phys., Part 1, 39, 1325 (2000).
16. Y. C. Quan, J. Joo, and D. Jung, Jpn. J. Appl. Phys., Part 1, 38, 1356 (1999).
17. B. K. Hwang, M. J. Loboda, G. A. Cerny, R. F. Schneider, J. A. Seifferly, and T. Washer, in Interconnect Technology Conference 2000, Proceedings of the IEEE 2000 International Meeting, p. 52 (2000).