Depth profiled porosity and microstructure evolution studied by positron annihilation and Raman spectroscopy in SiOCH low-k films

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 289-294

  Macchi, C ^a   Mariotto, G ^a   Karwasz, G P ^a   Zecca, A ^a   Bettonte, M ^a   Brusa, R S ^a  

^a UNIVERSITY OF TRENTO   (Italy)

Author keywords

Carbon inclusions; Porosity; Positron annihilation spectroscopy; Raman scattering; SiOCH films; Vibrational spectroscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PERMITTIVITY; POSITRON ANNIHILATION SPECTROSCOPY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; THERMAL EFFECTS; VIBRATION MEASUREMENT;

CARBON INCLUSIONS; SIOCH FILMS; SURFACE LAYERS; VIBRATIONAL SPECTROSCOPY;

POROSITY;

EID: 9544238134     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.093     Document Type: Conference Paper

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