Theoretical study of B diffusion with charged defects in strained Si

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 20, 2005, Pages

  Lin, L ^a   Kirichenko, T ^a,b   Sahu, B R ^a   Hwang, G S ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744464868     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.205206     Document Type: Article

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