Boron diffusion in strained Si: A first-principles study

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5543-5547

  Lin, Li ^a   Kirichenko, Taras ^a   Banerjee, Sanjay K ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAIN; DIFFUSION BARRIERS; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; STRAINED DEVICES;

ANISOTROPY; APPROXIMATION THEORY; BINDING ENERGY; DIFFUSION; ELECTRIC DISTORTION; ELECTRON ENERGY LEVELS; ENTHALPY; HYDROSTATIC PRESSURE; MOSFET DEVICES; RAPID THERMAL ANNEALING; SILICON; STRAIN; TENSORS;

BORON;

EID: 9944252518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803630     Document Type: Article

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