Predictive process simulation and stress-mediated diffusion in silicon

Computing in Science and Engineering

Volumn 3, Issue 4, 2001, Pages 92-95

  Windl, Wolfgang ^a   Laudon, Matthew ^b   Carlson, Neil N ^c   Daw, Murray S ^d  

^a Motorola GmbH   (Germany)

^b Axiowave Networks Inc   (United States)

^c MOTOROLA INC   (United States)

^d CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039560870     PISSN: 15219615     EISSN: None     Source Type: Journal    
DOI: 10.1109/5992.931909     Document Type: Article

References (10)

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3. W. Windl et al., "First Principles Study of Boron Diffusion in Silicon," Physical Rev. Letters, vol. 83, no. 21, 22 Nov.1999, pp. 4345-4348.
4. X.-Y. Liu, W. Windl, and M.P. Masquelier, "Ab Initio Modeling of Boron Clustering in Silicon," Applied Physics Letters, vol. 77, no. 13, Sept. 2000, pp. 2018-2020.
5. M. Laudon et al., "Multiscale Modeling of Stress-Mediated Diffusion in Silicon: Ab Initio to Continuum," Applied Physics Letters, vol. 78, no. 2, 8 Jan. 2001, pp. 201-203.
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7. S. Chaudhry and M.E. Law, "The Stress Assisted Evolution of Point and Extended Defects in Silicon," J. Applied Physics, vol. 82, no. 3, 1 Aug. 1997, pp. 1138-1146.
8. P.H. Dederichs and K. Schroeder, "Anisotrophic Diffusion in Stress Fields," Physical Rev. B, vol. 17, no. 6, 15 Mar. 1978, pp. 2524-2536.
9. M.S. Daw et al., "Efect of Stress on Dopant and Defect Diffusion in Si: General Treatment," to be published in July 2001, Physical Rev. B.
10. N.N. Carlson and K. Miller, "Design and Application of a Gradient-Weighted Moving Finite Element Code II: In Two Dimensions," SIAM J. Scientific Computing. vol. 19, no. 3, May 1998, pp. 766-798.