Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

Electronics Letters

Volumn 39, Issue 19, 2003, Pages 1412-1414

  Lin, Zhaojun ^a   Lu, Wu ^a   Lee, Jaesun ^a   Liu, Dongmin ^a   Flynn, J S ^b   Brandes, G R ^b  

^a The Ohio State University   (United States)

^b ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ANNEALED OHMIC CONTACTS; SCHOTTKY CONTACTS;

FIELD EFFECT TRANSISTORS;

EID: 0142008401     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030890     Document Type: Article

References (7)

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