Correlation between plasma chemistry, microstructure and electronic properties of Si:H thin films prepared with hydrogen dilution

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 236-239

  Chaudhuri, Partha ^a   Das, Debajyoti ^a   Ray, Partha Pratim ^a   Gupta, Namita Dutta ^a   Roy, Dhananjoy ^b   Longeaud, Christophe ^b  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; GRAIN BOUNDARIES; HYDROGEN; LIGHT ABSORPTION; MICROSTRUCTURE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTOR QUANTUM DOTS; THIN FILMS;

DIFFUSION LENGTH; GAS PRESSURE; MOBILITY LIFETIME PRODUCT; OPTICAL EMISSION SPECTROSCOPY (OES);

SILICON COMPOUNDS;

EID: 2942564160     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.061     Document Type: Conference Paper

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