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Volumn 78, Issue 17, 2001, Pages 2509-2511

Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation

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EID: 0035938313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1368185     Document Type: Article
Times cited : (24)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.