Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimes

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 390-399

  Kleider, J P ^a   Longeaud, C ^a   Gueunier, M E ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRODES; MODULATION; PHOTOCURRENTS; PHOTONS; SILICON; THIN FILMS;

BANDGAP STATES; HIGH FREQUENCY REGIME (HF); LOW FREQUENCY REGIME (LF); TRANSIENT PHOTOCURRENT (TPC);

SEMICONDUCTOR DEVICES;

EID: 2942562351     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.005     Document Type: Conference Paper

References (40)

1. Oheda H. J. Appl. Phys. 52:1981;6693.
2. Brüggemann R., Main C., Berkin J., Reynolds S. Philos. Mag. B. 62:1990;29.
3. Longeaud C., Kleider J.P. Phys. Rev. B. 45:1992;11672.
4. Longeaud C., Kleider J.P. Phys. Rev. B. 48:1993;8715.
5. Kleider J.P., Longeaud C. Hans N.-A. Solid State Phenomena. vols. 44-46:1995;597 Scitec Publications, Zurich.
6. Kounavis P. Phys. Rev. B. 64:2001;45204.
7. Hattori K., Adachi Y., Anzai M., Okamoto H., Hamakawa Y. J. Appl. Phys. 76:1994;2841.
8. Schumm G., Bauer G.H. Phys. Rev. B. 39:1989;5311.
9. Herberholz R., Walter T., Schock H.W. J. Appl. Phys. 76:1994;2904.
10. Brüggemann R., Kleider J.P., Longeaud C., Mencaraglia D., Guillet J., Bourée J.E., Nikura C. J. Non-Cryst. Solids. 266-269:2000;258.
11. Zhong F., Cohen J.D. Mater. Res. Soc. Symp. Proc. 258:1992;813.
12. Palinginis K.C., Cohen J.D., Yang J.C., Guha S. J. Non-Cryst. Solids. 266-269:2000;665.
13. Main C., Webb D.P., Brüggemann R., Reynolds S. J. Non-Cryst. Solids. 137&138:1991;951.
14. Longeaud C., Kleider J.P., Kaminski P., Koslowski R., Pawlowski M., Cwirko J. Semicond. Sci. Technol. 14:1999;747.
15. Longeaud C., Kleider J.P., Cuniot M. Opt. Mater. 4:1995;27.
16. Cohen J.D., Heath J., Palinginis K.C., Yang J.C., Guha S. J. Non-Cryst. Solids. 299-302:2002;449.
17. Koropecki R.R., Schmidt J.A., Arce R. J. Appl. Phys. 91:2002;8965.
18. Main C., Brüggemann R., Webb D.P., Reynolds S. Solid State Commun. 83:1992;401.
19. Webb D.P., Main C., Reynolds S., Chan Y.C., Lam Y.W., O'Leary S.K. J. Appl. Phys. 83:1998;4782.
20. Bullot J., Cordier P., Gauthier M., Mawawa G. Philos. Mag. B. 55:1987;599.
21. M.E. Gueunier, C. Longeaud, J.P. Kleider, Eur. Phys. J. Appl. Phys., in press.
22. Powell M.J., Deane S.C. Phys. Rev. B. 48:1993;10815.
23. Kleider J.P., Longeaud C., Dayoub F. Thin Solid Films. 337:1999;208.
24. Kleider J.P., Dayoub F. Phys. Rev. B. 58:1998;10401.
25. Terukov E.I., Konkov O.I., Kudoyarova V.Kh., Koughia K.V., Weiser G., Kuehne H., Kleider J.P., Longeaud C., Brüggemann R. J. Non-Cryst. Solids. 266-269:2000;614.
26. Kleider J.P., Longeaud C., Roca i Cabarrocas P. J. Appl. Phys. 72:1992;4727.
27. Kleider J.P., Longeaud C., Roca i Cabarrocas P. J. Non-Cryst. Solids. 164-166:1993;403.
28. Kleider J.P., Longeaud C., Barranco-Diaz M., Morin P., Roca i Cabarrocas P. J. Appl. Phys. 78:1995;317.
29. Kleider J.P., Longeaud C., Gauthier M., Meaudre M., Meaudre R., Butté R., Vignoli S., Roca i Cabarrocas P. Appl. Phys. Lett. 75:1999;3351.
30. Gueunier M.E., Kleider J.P., Brüggemann R., Lebib S., Roca i Cabarrocas P., Meaudre R., Canut B. J. Appl. Phys. 92:2002;4959.
31. Staebler D.L., Wronski C.R. Appl. Phys. Lett. 31:1977;292.
32. Kleider J.P., Longeaud C., Brüggemann R., Houzé F. Thin Solid Films. 383:2001;57.
33. Longeaud C., Roy D., Saadane O. Phys. Rev. B. 65:2002;85206.
34. Cohen J.D., Lang D.V. Phys. Rev. B. 25:1977;5321.
35. Kleider J.P. Thin Solid Films. 427:2003;127.
36. Okushi H., Takahama T., Tokumaru Y., Yamasaki S., Oheda H., Tanaka K. Phys. Rev. B. 27:1983;5184.
37. Hattori K., Anzai M., Okamoto H., Hamakawa Y. J. Appl. Phys. 77:1995;2989.
38. Kounavis P., Mataras D., Rapakoulias D. J. Appl. Phys. 80:1996;2305.
39. Meaudre R., Meaudre M. Philos. Mag. Lett. 82:2002;303.
40. M.E. Gueunier, PhD thesis, Université Paris-Sud, 2003.