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Volumn 299-302, Issue , 2002, Pages 449-454
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Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloys
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL DEFECTS;
GERMANIUM ALLOYS;
PHOTOCURRENTS;
PHOTODEGRADATION;
LIGHT-INDUCED DEGRADATIONS;
MODULATED PHOTOCURRENT (MPC) METHOD;
AMORPHOUS SILICON;
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EID: 0036540306
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(01)01172-3 Document Type: Article |
Times cited : (7)
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References (13)
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