Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 208-212

  Kleider, J P ^a   Longeaud, C ^a   Dayoub, F ^a  

^a UNIV PARIS SUD   (France)

Author keywords

Amorphous silicon; Bottom gate; Defect pool; Silicon nitride

Indexed keywords

EID: 0012796036     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01178-X     Document Type: Article

References (10)

1. A. Rolland, J. Richard, J.P. Kleider, D. Mencaraglia, J. Elec. Soc. 140 (1993) 3679.
2. F. Dayoub, J.P. Kleider, D. Mencaraglia, Thin Solid Films 296 (1997) 137.
3. J.P. Kleider, C. Longeaud, Solid State Phenom. 44-46 (1995) 597.
4. J.P. Kleider, F. Dayoub, Phys. Rev. B 55 (1997) R10181.
5. J.P. Kleider, F. Dayoub, Phys. Rev. B 58 (1998) 10401.
6. G. Schumm, C.D. Abel, G.H. Bauer, J. Non-Cryst. Solids 137-138 (1991) 351.
7. M.J. Powell, S.C. Deane, Phys. Rev. B 48 (1993) 10815.
8. G. Schumm, Phys. Rev B 49 (1994) 2427.
9. S.C. Deane, F.J. Clough, W.I. Milne, M.J. Powell, J. Appl. Phys. 73 (1993) 2895.
10. J. Baixcras, D. Mencaraglia, P. Andro, Phil. Mag. B 37 (1978) 403.