Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 747-756

  Longeaud, C ^a   Kleider, J P ^a   Kaminski, P ^b   Kozlowski, R ^b   Pawlowski, M ^c   Cwirko, J ^c  

^a UNIV PARIS SUD   (France)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; ELECTRON TRAPS; MATHEMATICAL MODELS; PHOTOCURRENTS; SEMICONDUCTOR DOPING;

MONOCRYSTALLINE MATERIALS; PHOTOINDUCED TRANSIENT SPECTROSCOPY; SEMI INSULATING MATERIALS; TRAP PARAMETERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033189138     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/302     Document Type: Article

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