Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 8965-8969

  Koropecki, R R ^a   Schmidt, J A ^a   Arce, R ^a  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF DEFECTS; DENSITY OF STATE; ENERGY PROFILE; EXPERIMENTAL TECHNIQUES; LOCALIZED STATE; MODULATED PHOTOCURRENT; QUASI-FERMI LEVEL; RECOMBINATION LIFETIME; TRAPPED CARRIERS;

COMPUTER SIMULATION; DEFECT DENSITY; FERMI LEVEL;

AMORPHOUS SEMICONDUCTORS;

EID: 0036606938     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469695     Document Type: Article

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