Investigation of the SiO 2 /Si(1 0 0) interface structure by means of angle-scanned photoelectron spectroscopy and diffraction

Journal of Electron Spectroscopy and Related Phenomena

Volumn 137-140, Issue SPEC. ISS., 2004, Pages 79-84

  Dreiner, S ^a,b   Schurmann M ^a   Westphal, C ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

^b UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

Angle scanned photoelectron spectroscopy; Chemical shift; Photoelectron diffraction; Silicon oxide

Indexed keywords

AMORPHOUS SILICON; DIFFRACTION; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTOR DEVICES; SPECTRUM ANALYSIS;

ANAGLE-SCANNED-PHOTOELECTRON SPECTROSCOPY; CHEMICAL SHIFT; PHOTOELECTRON DIFFRACTION;

INTERFACES (MATERIALS);

EID: 2942538877     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2004.02.024     Document Type: Conference Paper

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