ESD protection design of low-voltage-triggered p-n-p devices and their failure modes in mixed-voltage I/O interfaces with signal levels higher than VDD and lower than VSS

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 3, 2005, Pages 602-612

  Ker, Ming Dou ^a,b   Chang, Wei Jen ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electrostatic discharge (ESD); Human body mode (HBM); Low voltage triggered p n p (LVTp n p); Optical beam induced resistance change (OBIRCH); Photon emission microscope (EMMI)

Indexed keywords

ELECTROSTATIC DISCHARGE (ESD); HUMAN BODY MODE (HBM); LOW-VOLTAGE-TRIGGERED P-N-P (LVTP-N-P); OPTICAL-BEAM-INDUCED RESISTANCE CHANGE (OBIRCH); PHOTON EMISSION MICROSCOPE (EMMI);

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; DIFFUSION; ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; ELECTROSTATICS; MICROSCOPES; PHOTONS;

SEMICONDUCTOR JUNCTIONS;

EID: 29344448892     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.856500     Document Type: Article

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