메뉴 건너뛰기




Volumn 16, Issue 2, 2003, Pages 319-334

Methodology on extracting compact layout rules for latchup prevention in deep-submicron bulk CMOS technology

Author keywords

Design rule; Guard ring; I O cell; Latchup; Pickup

Indexed keywords

FLIP FLOP CIRCUITS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON; THERMAL EFFECTS;

EID: 0038630656     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.811885     Document Type: Article
Times cited : (52)

References (21)
  • 4
    • 0009558710 scopus 로고
    • Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: Part I - Theoretical derivation
    • June
    • M.-D. Ker and C.-Y. Wu, "Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: Part I - theoretical derivation," IEEE Trans. Electron. Devices, vol. 42, pp. 1141-1148, June 1995.
    • (1995) IEEE Trans. Electron. Devices , vol.42 , pp. 1141-1148
    • Ker, M.-D.1    Wu, C.-Y.2
  • 5
    • 0038705500 scopus 로고
    • Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: Part II - Quantitative evaluation
    • June
    • _, "Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: part II - quantitative evaluation," IEEE Trans. Electron. Devices, vol. 42, pp. 1149-1155, June 1995.
    • (1995) IEEE Trans. Electron. Devices , vol.42 , pp. 1149-1155
  • 6
    • 0037691091 scopus 로고
    • An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layers process
    • D. B. Estreich, A. Ochoa, and R. W. Dutton, "An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layers process," IEDM Tech. Dig., pp. 230-234, 1978.
    • (1978) IEDM Tech. Dig. , pp. 230-234
    • Estreich, D.B.1    Ochoa, A.2    Dutton, R.W.3
  • 10
    • 0032597876 scopus 로고    scopus 로고
    • New experimental methodology to extract compact layout rules for latchup prevention in bulk CMOS IC's
    • M.-D. Ker, W.-Y. Lo, and C.-Y. Wu, "New experimental methodology to extract compact layout rules for latchup prevention in bulk CMOS IC's," Proc. IEEE Custom Integrated Circuits Conf., pp. 143-146, 1999.
    • (1999) Proc. IEEE Custom Integrated Circuits Conf. , pp. 143-146
    • Ker, M.-D.1    Lo, W.-Y.2    Wu, C.-Y.3
  • 12
    • 0027647341 scopus 로고
    • A practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSI's
    • T. Aoki, "A practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSI's," IEEE Trans. Electron. Devices, vol. 40, pp. 1432-1436, 1993.
    • (1993) IEEE Trans. Electron. Devices , vol.40 , pp. 1432-1436
    • Aoki, T.1
  • 14
    • 0025225982 scopus 로고
    • Novel test structure for the investigation of the efficiency of guard rings used for I/O latchup prevention
    • J. Quincke, "Novel test structure for the investigation of the efficiency of guard rings used for I/O latchup prevention," in Proc. IEEE Int. Conf. Microelectronics Test Structure, 1990, pp. 35-39.
    • (1990) Proc. IEEE Int. Conf. Microelectronics Test Structure , pp. 35-39
    • Quincke, J.1
  • 15
    • 0026204012 scopus 로고
    • Effects of the interaction of neighboring structures on the latchup behavior of CMOS IC's
    • R. Menozzi, L. Selmi, E. Sangiorgi, and B. Ricco, "Effects of the interaction of neighboring structures on the latchup behavior of CMOS IC's," IEEE Trans. Electron. Devices, vol. 38, pp. 1978-1981, 1991.
    • (1991) IEEE Trans. Electron. Devices , vol.38 , pp. 1978-1981
    • Menozzi, R.1    Selmi, L.2    Sangiorgi, E.3    Ricco, B.4
  • 16
    • 0032316294 scopus 로고    scopus 로고
    • ESD and latch-up characteristics of semiconductor device with thin epitaxial substrate
    • T. Suzuki, S. Sekino, S. Ito, and H. Monma, "ESD and latch-up characteristics of semiconductor device with thin epitaxial substrate," in Proc. EOS/ESD Symp., 1998, pp. 199-207.
    • (1998) Proc. EOS/ESD Symp. , pp. 199-207
    • Suzuki, T.1    Sekino, S.2    Ito, S.3    Monma, H.4
  • 17
    • 0038367182 scopus 로고    scopus 로고
    • Building in reliability with latch-up, ESD and hot carrier effects on 0.25 μm CMOS technology
    • C. Leroux, P. Salome, G. Reimbold, D. Blachier, G. Guegan, and M. Bonis, "Building in reliability with latch-up, ESD and hot carrier effects on 0.25 μm CMOS technology," Microelectronics Reliability, vol. 38, pp. 1547-1552, 1998.
    • (1998) Microelectronics Reliability , vol.38 , pp. 1547-1552
    • Leroux, C.1    Salome, P.2    Reimbold, G.3    Blachier, D.4    Guegan, G.5    Bonis, M.6
  • 18
    • 0037691090 scopus 로고    scopus 로고
    • IC Latch-up Test
    • IC Latch-up Test, EIA/JEDEC Standard no. 78, 1997.
    • (1997) EIA/JEDEC Standard , vol.78
  • 19
    • 0029544242 scopus 로고
    • Transient-induced latchup testing of CMOS integrated circuits
    • G. H. Weiss and D. E. Young, "Transient-induced latchup testing of CMOS integrated circuits," in Proc. EOS/ESD Symp., 1995, pp. 194-198.
    • (1995) Proc. EOS/ESD Symp. , pp. 194-198
    • Weiss, G.H.1    Young, D.E.2
  • 20
    • 0030782779 scopus 로고    scopus 로고
    • Analysis and prevention of DRAM latch-up during power-on
    • Y.-H. Kim et al., "Analysis and prevention of DRAM latch-up during power-on," IEEE. Solid-State Circuits, vol. 32, pp. 79-85, 1997.
    • (1997) IEEE. Solid-State Circuits , vol.32 , pp. 79-85
    • Kim, Y.-H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.