-
3
-
-
0031707249
-
Latchup in CMOS technology
-
M. J. Hargrove, S. Voldman, R. Gauthier, J. Brown, K. Duncan, and W. Craig, "Latchup in CMOS technology," Proc. IEEE Int. Reliability Physics Symp., pp. 269-278, 1998.
-
(1998)
Proc. IEEE Int. Reliability Physics Symp.
, pp. 269-278
-
-
Hargrove, M.J.1
Voldman, S.2
Gauthier, R.3
Brown, J.4
Duncan, K.5
Craig, W.6
-
4
-
-
0009558710
-
Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: Part I - Theoretical derivation
-
June
-
M.-D. Ker and C.-Y. Wu, "Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: Part I - theoretical derivation," IEEE Trans. Electron. Devices, vol. 42, pp. 1141-1148, June 1995.
-
(1995)
IEEE Trans. Electron. Devices
, vol.42
, pp. 1141-1148
-
-
Ker, M.-D.1
Wu, C.-Y.2
-
5
-
-
0038705500
-
Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: Part II - Quantitative evaluation
-
June
-
_, "Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method: part II - quantitative evaluation," IEEE Trans. Electron. Devices, vol. 42, pp. 1149-1155, June 1995.
-
(1995)
IEEE Trans. Electron. Devices
, vol.42
, pp. 1149-1155
-
-
-
6
-
-
0037691091
-
An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layers process
-
D. B. Estreich, A. Ochoa, and R. W. Dutton, "An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layers process," IEDM Tech. Dig., pp. 230-234, 1978.
-
(1978)
IEDM Tech. Dig.
, pp. 230-234
-
-
Estreich, D.B.1
Ochoa, A.2
Dutton, R.W.3
-
7
-
-
0023435530
-
Latchup performance of retrograde and conventional n-well CMOS technologies
-
A. G. Lewis, R. A. Martin, T.-Y. Huang, J. Y. Chen, and M. Koyanagi, "Latchup performance of retrograde and conventional n-well CMOS technologies," IEEE Trans. Electron. Devices, vol. 34, pp. 2156-2164, 1987.
-
(1987)
IEEE Trans. Electron. Devices
, vol.34
, pp. 2156-2164
-
-
Lewis, A.G.1
Martin, R.A.2
Huang, T.-Y.3
Chen, J.Y.4
Koyanagi, M.5
-
8
-
-
0020293036
-
Deep trench isolated CMOS devices
-
R. D. Rung, H. Momose, and Y. Nagakubo, "Deep trench isolated CMOS devices," IEDM Tech. Dig., pp. 237-240, 1982.
-
(1982)
IEDM Tech. Dig.
, pp. 237-240
-
-
Rung, R.D.1
Momose, H.2
Nagakubo, Y.3
-
10
-
-
0032597876
-
New experimental methodology to extract compact layout rules for latchup prevention in bulk CMOS IC's
-
M.-D. Ker, W.-Y. Lo, and C.-Y. Wu, "New experimental methodology to extract compact layout rules for latchup prevention in bulk CMOS IC's," Proc. IEEE Custom Integrated Circuits Conf., pp. 143-146, 1999.
-
(1999)
Proc. IEEE Custom Integrated Circuits Conf.
, pp. 143-146
-
-
Ker, M.-D.1
Lo, W.-Y.2
Wu, C.-Y.3
-
11
-
-
0009556831
-
Compact layout rule extraction for latchup prevention in a 0.25-μm shallow-trench-isolation silicided bulk CMOS process
-
M.-D. Ker,W.-Y. Lo, T.-Y. Chen, H. Tang, S.-S. Chen, and M.-C. Wang, "Compact layout rule extraction for latchup prevention in a 0.25-μm shallow-trench-isolation silicided bulk CMOS process," in Proc. IEEE Int. Symp. Quality Electronic Design, 2001, pp. 267-272.
-
(2001)
Proc. IEEE Int. Symp. Quality Electronic Design
, pp. 267-272
-
-
Ker, M.-D.1
Lo, W.-Y.2
Chen, T.-Y.3
Tang, H.4
Chen, S.-S.5
Wang, M.-C.6
-
12
-
-
0027647341
-
A practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSI's
-
T. Aoki, "A practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSI's," IEEE Trans. Electron. Devices, vol. 40, pp. 1432-1436, 1993.
-
(1993)
IEEE Trans. Electron. Devices
, vol.40
, pp. 1432-1436
-
-
Aoki, T.1
-
13
-
-
0024108232
-
Layout dependence of CMOS latchup
-
R. Menozzi, L. Selmi, E. Sangiorgi, G. Crisenza, T. Cavioni, and B. Ricco, "Layout dependence of CMOS latchup," IEEE Trans. Electron. Devices, vol. 35, pp. 1892-1901, 1988.
-
(1988)
IEEE Trans. Electron. Devices
, vol.35
, pp. 1892-1901
-
-
Menozzi, R.1
Selmi, L.2
Sangiorgi, E.3
Crisenza, G.4
Cavioni, T.5
Ricco, B.6
-
14
-
-
0025225982
-
Novel test structure for the investigation of the efficiency of guard rings used for I/O latchup prevention
-
J. Quincke, "Novel test structure for the investigation of the efficiency of guard rings used for I/O latchup prevention," in Proc. IEEE Int. Conf. Microelectronics Test Structure, 1990, pp. 35-39.
-
(1990)
Proc. IEEE Int. Conf. Microelectronics Test Structure
, pp. 35-39
-
-
Quincke, J.1
-
15
-
-
0026204012
-
Effects of the interaction of neighboring structures on the latchup behavior of CMOS IC's
-
R. Menozzi, L. Selmi, E. Sangiorgi, and B. Ricco, "Effects of the interaction of neighboring structures on the latchup behavior of CMOS IC's," IEEE Trans. Electron. Devices, vol. 38, pp. 1978-1981, 1991.
-
(1991)
IEEE Trans. Electron. Devices
, vol.38
, pp. 1978-1981
-
-
Menozzi, R.1
Selmi, L.2
Sangiorgi, E.3
Ricco, B.4
-
16
-
-
0032316294
-
ESD and latch-up characteristics of semiconductor device with thin epitaxial substrate
-
T. Suzuki, S. Sekino, S. Ito, and H. Monma, "ESD and latch-up characteristics of semiconductor device with thin epitaxial substrate," in Proc. EOS/ESD Symp., 1998, pp. 199-207.
-
(1998)
Proc. EOS/ESD Symp.
, pp. 199-207
-
-
Suzuki, T.1
Sekino, S.2
Ito, S.3
Monma, H.4
-
17
-
-
0038367182
-
Building in reliability with latch-up, ESD and hot carrier effects on 0.25 μm CMOS technology
-
C. Leroux, P. Salome, G. Reimbold, D. Blachier, G. Guegan, and M. Bonis, "Building in reliability with latch-up, ESD and hot carrier effects on 0.25 μm CMOS technology," Microelectronics Reliability, vol. 38, pp. 1547-1552, 1998.
-
(1998)
Microelectronics Reliability
, vol.38
, pp. 1547-1552
-
-
Leroux, C.1
Salome, P.2
Reimbold, G.3
Blachier, D.4
Guegan, G.5
Bonis, M.6
-
18
-
-
0037691090
-
IC Latch-up Test
-
IC Latch-up Test, EIA/JEDEC Standard no. 78, 1997.
-
(1997)
EIA/JEDEC Standard
, vol.78
-
-
-
19
-
-
0029544242
-
Transient-induced latchup testing of CMOS integrated circuits
-
G. H. Weiss and D. E. Young, "Transient-induced latchup testing of CMOS integrated circuits," in Proc. EOS/ESD Symp., 1995, pp. 194-198.
-
(1995)
Proc. EOS/ESD Symp.
, pp. 194-198
-
-
Weiss, G.H.1
Young, D.E.2
-
20
-
-
0030782779
-
Analysis and prevention of DRAM latch-up during power-on
-
Y.-H. Kim et al., "Analysis and prevention of DRAM latch-up during power-on," IEEE. Solid-State Circuits, vol. 32, pp. 79-85, 1997.
-
(1997)
IEEE. Solid-State Circuits
, vol.32
, pp. 79-85
-
-
Kim, Y.-H.1
|