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Volumn , Issue , 2004, Pages 213-216

Layout optimization on low-voltage-triggered PNP devices for ESD protection in mixed-voltage I/O interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTROSTATICS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; OPTIMIZATION; SIGNAL PROCESSING;

EID: 14844310333     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (5)
  • 1
    • 0028742177 scopus 로고
    • ESD protection in a mixed voltage interface and multi-rail disconnected power grid environment in 0.5- And 0.25-μm channel length CMOS technologies
    • S. H. Voldman, "ESD protection in a mixed voltage interface and multi-rail disconnected power grid environment in 0.5- and 0.25-μm channel length CMOS technologies," in Proc. of EOS/ESD Symp., 1994, pp. 125-134.
    • (1994) Proc. of EOS/ESD Symp. , pp. 125-134
    • Voldman, S.H.1
  • 3
    • 2942657465 scopus 로고    scopus 로고
    • Low-voltage-triggered PNP devices for ESD protection design in mixed-voltage I/O interface with over-VDD and under-VSS signal levels
    • M.-D. Ker, W.-J. Chang, and W.-Y. Lo, "Low-voltage-triggered PNP devices for ESD protection design in mixed-voltage I/O interface with over-VDD and under-VSS signal levels" in Proc. of IEEE Int. Symp. on Quality Electronic Design, 2004, pp. 433-438.
    • (2004) Proc. of IEEE Int. Symp. on Quality Electronic Design , pp. 433-438
    • Ker, M.-D.1    Chang, W.-J.2    Lo, W.-Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.