Characterization and investigation of the interaction between hot electron and electrostatic discharge stresses using NMOS devices in 0.13 μm CMOS technology

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 219-225

  Salman, A ^b   Gauthier, R ^a   Stadler, W ^c   Esmark, K ^c   Muhammad, M ^a   Putnam, C ^a   Ioannou, D ^b  

^a IBM MICROELECTRONICS   (United States)

^b GEORGE MASON UNIVERSITY   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Breakdown voltage; Circuits; CMOS technology; Electric breakdown; Electrons; Electrostatic discharge; Helium; MOS devices; Protection; Stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRONS; ELECTROSTATIC DISCHARGE; ELECTROSTATICS; HELIUM; HOT ELECTRONS; MOS DEVICES; NETWORKS (CIRCUITS); SILICIDES; STRESSES;

CMOS TECHNOLOGY; DEVICE PARAMETERS; HIGH CURRENTS; NMOS DEVICES; NON DESTRUCTIVE; PROTECTION; PROTECTION DEVICE; SECOND BREAKDOWN CURRENTS;

ELECTROSTATIC DEVICES;

EID: 3042752745     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922905     Document Type: Conference Paper

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