InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 2301-2304

  Lee, Kuan Wei ^a   Lin, Yu Ju ^a   Yang, Nan Ying ^a   Lee, Yu Chang ^a   Sze, Po Wen ^b   Wang, Yeong Her ^a   Houng, Mau Phon ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Gate dielectric; Liquid phase; PHEMT

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MOS DEVICES; OXIDATION; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

GATE DIELECTRICS; LIQUID PHASE; OXIDE FILMS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 21644451022     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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