Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 516-519

  Lee, Kuan Wei ^a   Yang, Nan Ying ^a   Lee, Kai Lin ^a   Sze, Po Wen ^b   Houng, Mau Phon ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT COLLECTORS; LIQUID PHASE EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE;

CURRENT GAIN; LIQUID PHASE OXIDATION; SURFACE PASSIVATION; SURFACE RECOMBINATION CURRENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33747410866     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517546     Document Type: Conference Paper

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