Nitride-based LEDs with n--GaN current spreading layers

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 891-893

  Su, Y K ^a   Chang, S J ^a   Wei, S C ^a   Chuang, R W ^a   Chen, S M ^b   Li, W L ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

Current spreading; Electrostatic discharge (ESD); GaN; Light emitting diode (LED)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; SPECTRUM ANALYSIS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CURRENT SPREADING; DOUBLE CRYSTAL X-RAY DIFFRACTION (DCXRD); ELECTROSTATIC DISCHARGE (ESD); NITRIDE-BASED LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 29244469975     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859647     Document Type: Article

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