SCOPUS 정보 검색 플랫폼

Volumn 45, Issue 5-6, 2005, Pages 811-814

Breakdown spots of ultra-thin (EOT < 1.5 nm) HfO2/SiO 2 stacks observed with enhanced-CAFM

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; INTEGRATED CIRCUITS; MOS CAPACITORS; PERMITTIVITY;

DIELECTRIC BREAKDOWN (BD); DIELECTRIC STRENGTH; ENHANCED CONDUCTIVE ATOMIC FORCE MICROSCOPY (ECAFM); EQUIVALENT OXIDE THICKNESS (EOT);

ULTRATHIN FILMS;

EID: 14644413561 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2004.11.042 Document Type: Conference Paper

Times cited : (12)

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