Thermal design considerations for wide bandgap transistors

Microwave Journal

Volumn 43, Issue 6, 2000, Pages

  Kopp, Bruce A ^a   Ouellette, Elizabeth A ^a   Billups, Amy J ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; NITRIDES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMAL EFFECTS;

WIDE BANDGAP TRANSISTORS;

GATES (TRANSISTOR);

EID: 0343826138     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. G.J. Sullivan et al., "High-power 10 GHz Operation of AlGaN HFETs on Insulating SiC," IEEE Electron Device Letters, June 1998, pp. 198-200.
2. S.T. Allen et al., "Recent Progress in SiC Microwave MESFETs," Proceedings of the Materials Research Society, Vol. 572, April 1999.
3. S.T. Sheppard et al., "High-power Microwave GaN/AlGaN HEMTs on Semi-insulating SiC Substrates," IEEE Electron Device Letters, April 1999, pp. 161-163.
4. D. Dawson, "Thermal Modeling, Measurements and Design Considerations of GaAs Microwave Devices," IEEE GaAs Symposium Proceedings, 1994, pp. 285-290.
5. Private conversation, Dr. Scott Allen, Cree Research Inc.
6. J.J. Xu et al., "1-8 GHz GaN-based Power Amplifier Using Flip-chip Bonding," IEEE Microwave and Guided Wave Letters, July 1999, pp. 277-279.
7. J. Bedinger, "Microwave Flip Chip and BGA Technology," IEEE MTT-S 2000.
8. Zhang et al., "RF and Mechanical Characterization of Flip-chip Interconnect," IEEE MTT, December 1998, p. 2269-2275.
9. E.T. Yu et al., "Measurement of Piezoelectrically Induced Charge in GaN/AlGaN Heterostructure Field-effect Transistors," Applied Physics Letters, November 1997, pp. 2794-2796.