Thermal analysis and considerations for gallium nitride microwave power amplifier packaging

Microwave Journal

Volumn 44, Issue 12, 2001, Pages

  Kopp, Bruce A ^a   Billups, Amy J ^a   Luesse, Mark H ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE POWER AMPLIFIERS;

CHIP SCALE PACKAGES; ENERGY GAP; FLIP CHIP DEVICES; GALLIUM NITRIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SILICON CARBIDE; SOLDERED JOINTS; THERMOANALYSIS; WAVEFORM ANALYSIS; WAVEGUIDES;

MICROWAVE AMPLIFIERS;

EID: 0035697808     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. Recent progress in SiC microwave MESFETs
2. High power microwave GaN/AlGaN HEMTs on semi-insulating SiC substrates
3. Thermal design considerations for wide bandgap transistors
4. Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques