Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers emitting from 1.29 to 1.52 μm

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Ulloa, J M ^a   Hierro, A ^a   Montes, M ^a   Damilano, B ^b   Hugues, M ^b   Barjon, J ^b   Duboz, J Y ^b   Massies, J ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT ABSORPTION; NITROGEN; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

INJECTION EFFICIENCY; LASING CHARACTERISTICS; RECOMBINATION LOSSES; THRESHOLD CURRENT DENSITY (JTH);

QUANTUM WELL LASERS;

EID: 29144441163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2151249     Document Type: Article

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