Room temperature performance of low threshold 1.34-1.44-μm GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters

Volumn 17, Issue 6, 2005, Pages 1142-1144

  Hierro, A ^a   Ulloa, J M ^a   Calleja, E ^a   Damilano, B ^b   Barjon, J ^b   Duboz, J Y ^b   Massies, J ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CNRS   (France)

Author keywords

1.45 m emission; GaInNAs; Molecular beam epitaxy (MBE); Quantum well (QW) lasers

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

ROOM TEMPERATURE; THRESHOLD CURRENT DENSITIES;

QUANTUM WELL LASERS;

EID: 20544443420     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.846567     Document Type: Article

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