Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers

IEEE Photonics Technology Letters

Volumn 16, Issue 3, 2004, Pages 741-743

  Yeh, Jeng Ya ^a   Tansu, Nelson ^b   Mawst, Luke J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Lehigh University   (United States)

Author keywords

Current injection efficiency; InGaAsN; Long wavelength quantum well (QW) laser; Material gain; Temperature sensitivity; Thermionic carrier leakage

Indexed keywords

CHARGE CARRIERS; GAIN MEASUREMENT; GALLIUM NITRIDE; INJECTION LASERS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SENSITIVITY ANALYSIS; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

CURRENT INJECTION EFFICIENCY; INGAASN; LONG WAVELENGTH QUANTUM WELL (QM) LASERS; MATERIAL GAIN; TEMPERATURE SENSITIVITY; THERMIONIC CARRIER LEAKAGE;

QUANTUM WELL LASERS;

EID: 1642633883     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.823715     Document Type: Article

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