Effect of geometry on stress relaxation in InAs/GaAs rectangular nanomesas: Multimillion-atom molecular dynamics simulations

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Makeev, Maxim A ^a   Kalia, Rajiv K ^a   Nakano, Aiichiro ^a   Vashishta, Priya ^a   Madhukar, Anupam ^a  

^a University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PLANES; HYDROSTATIC STRESS; LATTICE-MISMATCH-INDUCED STRESS RELAXATION PATHWAYS; MULTIMILLION-ATOM MOLECULAR DYNAMICS SIMULATIONS;

ASPECT RATIO; CRYSTAL LATTICES; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; STRESS CONCENTRATION; STRESS RELAXATION;

MOLECULAR DYNAMICS;

EID: 29144437152     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1988970     Document Type: Article

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