A semi-empirical model for the tunnel current-voltage characteristics in Al-SiO2-Si(p) structures

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 251-260

  Faigon A ^a   Campabadal, F ^b  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; APPROXIMATION THEORY; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRON TUNNELING; MATHEMATICAL MODELS; PROBABILITY; SEMICONDUCTING SILICON; SILICA;

FOWLER-NORDHEIM TUNNELING; LOGARITHMIC DERIVATIVE; TUNNELING PROBABILITY;

TUNNEL DIODES;

EID: 0030081539     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00119-0     Document Type: Review

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