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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 675-679

Defects in 4H silicon carbide

(6) Bergman, J P a Storasta, L a Carlsson, F H C a Sridhara, S a Magnusson, B a Janze'n, E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

Defects; SiC; Stacking faults

Indexed keywords

EXCITONS; LUMINESCENCE; STACKING FAULTS; SYNCHROTRONS;

MINORITY CARRIER TRANSIENT SPECTROSCOPY (MCTS);

SILICON CARBIDE;

EID: 0035678296 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00790-6 Document Type: Article

Times cited : (9)

References (12)

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2
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6
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8
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12
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- Lendenmann, H.¹ Dahlquist, F.² Johansson, N.³ Söderholm, R.⁴ Nilsson, P.A.⁵ Bergman, J.P.⁶ Skytt, P.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.