Photo-EPR and hall measurements on undoped high purity semi-insulating 4H-SIC substrates

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 501-504

  Kalabukhova, E N ^a   Lukin, S N ^a   Savchenko, D V ^a   Mitchel, W C ^b   Mitchell, William D ^b  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

EPR; Hall effect; Intrinsic defects; Semi insulating SIC

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DEFECTS; ELECTRON ENERGY LEVELS; FERMI LEVEL; HALL EFFECT; LIGHTING; PARAMAGNETIC RESONANCE; SUBSTRATES;

HALL MEASUREMENTS; INTRINSIC DEFECTS; SEMI-INSULATING (SI); TEMPERATURE DEPENDENT;

SILICON CARBIDE;

EID: 8744282614     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.501     Document Type: Conference Paper

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