Equilibrium crystal shape of GaAs in nanoscale patterned growth

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1214-1218

  Lee, S G ^a   Brueck, S R J ^a  

^a MSC01 1070   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; EQUILIBRIUM CRYSTAL SHAPE (ECS); SURFACE FREE ENERGY; WULFF CONSTRUCTION;

CRYSTAL ORIENTATION; DEPOSITION; ETCHING; INTERFACIAL ENERGY; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SILICA; THERMODYNAMICS; VECTORS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3242694497     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757657     Document Type: Article

References (12)

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6. A statistical volume distribution of the GaAs islands similar to that shown in Fig. 4 was obtained from the profiling by atomic force microscopy (AFM) and also gave effective deposition thicknesses in this range. AFM profiling, however, did not clearly reveal the faceting on the surface of the epi-islands for d ∼ 180 nm because the lateral dimension of an individual-facet was typically less than d/2, and the AFM profiles were convoluted with a tip shape of comparable dimensions.
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8. Vertical sidewalls which also belong to {110} were observed in the GaAs islands having square or rectangular shape in the top view of Fig. 3(b) but they were generated during lateral overgrowth along [100], as seen in Fig. 3(b). Further study of the ECS of these laterally overgrown GaAs islands will be reported elsewhere, but the appearance of vertical {110} sidewalls on those islands is another evidence that {110} is the most favorable orientation for ECS under our growth conditions.
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