Emergence of p(2×2) on highly doped n-type Si(100) surfaces: A scanning tunneling microscopy and spectroscopy study

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 24, 2005, Pages

  Sagisaka, Keisuke ^a   Fujita, Daisuke ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28244481867     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.245319     Document Type: Article

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