Local and reversible change of the reconstruction on Ge(001) surface between c(4 × 2) and p(2 × 2) by scanning tunneling microscopy

Journal of the Physical Society of Japan

Volumn 72, Issue 10, 2003, Pages 2425-2428

  Takagi, Yasumasa ^a   Yoshimoto, Yoshihide ^a   Nakatsuji, Kan ^a   Komori, Fumio ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

c(4 2); Ge(001) surface; Inelastic tunneling process; p(2 2); Reconstruction; Scanning tunneling microscope

Indexed keywords

GERMANIUM;

ARTICLE; ELECTRIC FIELD; ELECTRIC POTENTIAL; ENERGY TRANSFER; HYSTERESIS; IMAGE RECONSTRUCTION; SCANNING TUNNELING MICROSCOPY; STRUCTURE ANALYSIS; SURFACE PROPERTY;

EID: 0242626573     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.72.2425     Document Type: Article

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